High purity graphite generally refers to the amount of carbon containing more than 99.99% of graphite in the organizational structure can be divided into three categories: coarse grain structure, fine grain structure and fine grain structure. The base material for integrated circuits is mainly single crystal silicon chip, silicon single crystal growth process is currently mainly used in Czochralski (CZ) method, and other methods of magnetic Czochralski method (MCZ), regional (FZ) method and double crucible pulling method, the total amount of single crystal silicon 80% monocrystalline silicon with the global electronics industry. Czochralski graphite furnace is monocrystalline silicon using consumables, high purity graphite materials into the heating system of monocrystalline silicon furnace. In 2005 China needs to be directly drawn silicon single crystal furnace with graphite about 800 t. [1]

　　Another important use of high purity graphite is processed into various kinds of crucible, used for the production of precious metals, rare metals or high pure metal, non-metallic materials. Graphite electrode is also a kind of high purity graphite, which can be used for the spectral analysis of all elements except for carbon. The impurity content of finished product should be less than 6*10 were prepared by chemical method and standard sample collection for impurity spectrum of pure carbon powder or graphite pure spectrum in spectrum analysis, the two kinds of high purity materials of impurity content requirements are at 6 *10; in some cases, to the carbon content reached 99.9995% the total ash content of less than 5 *10. The molding methods of high purity graphite include three kinds of forming methods, such as extrusion, molding, and static pressing. Table 9 the physical and chemical properties of high purity graphite products made in China

　　High pure graphite generally refers to the amount of carbon in the 99.99% above the stone ink, in the organization structure can be divided into three kinds of coarse grain structure, fine particle structure and ultrafine particles structure, high pure graphite is used in a large number of single crystal silicon furnace. The base material for integrated circuit is mainly silicon single crystal chip, the silicon single crystal growth process is mainly uses the Czochralski (CZ), and other methods of magnetic Czochralski method (MCZ), regional (Fz) method and double crucible pulling method, Czochralski silicon accounted for about 80% of the total amount of silicon single crystal for the global electronics industry, Czochralski silicon furnace graphite piece is a consumable by high pure graphite material processing into Czochralski silicon furnace heating system. In 2005 China needs to use graphite about 800 t in the single crystal furnace.

　　Another important purpose of high pure graphite is processed into various kinds of crucible, used in the production of precious metals, rare metals or high purity metals, non-metallic materials. The graphite electrode is also a kind of high purity graphite, which can be used for the analysis of the spectra of all the elements except carbon. Impurities of finished product should be not more than 6 * 10 in spectrum analysis in preparation of standard sample and catch impurities set required spectral pure carbon powder or spectral pure graphite toner by chemical method and. These two kinds of high purity materials of impurity content requirements are in 6 * 10; in some uses, the need to contain carbon content up to 99.9995%, total ash content of less than 5 * 10. There are three kinds of molding methods of high purity graphite, such as extrusion molding, molding, and so on.